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| DC COMPONENTS CO., LTD. R 2N4401 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 60 40 5 600 625 +150 -55 to +150 Unit V V V mA mW o o .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICEX (1) Min 60 40 5 0.75 20 40 80 100 40 250 2% Typ - Max 0.1 0.4 0.75 0.95 1.2 300 6.5 Unit V V V A V V V V MHz pF Test Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCE=35V, VBE=0.4V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V IC=500mA, VCE=2V IC=20mA, VCE=10V, f=100MHz VCB=5V, IE=0, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (1) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 DC Current Gain (1) hFE3 hFE4 hFE5 Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width fT Cob 380s, Duty Cycle Classification of hFE4 Rank Range A 100~210 B 190~300 |
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